Physical Model for the Low-Dose-Rate Effect in Bipolar Devices

Author

Boch, J. ; Saigne, F. ; Schrimpf, R.D. ; Vaille, J.-R. ; Dusseau, L. ; Lorfevre, E.

Author_Institution

CEM2, Univ. de Montpellier II

Volume

53

Issue

6

fYear

2006

Firstpage

3655

Lastpage

3660

Abstract

A physical model of the dose-rate effect in bipolar junction transistors is proposed, based on competition between trapping and recombination of radiation-induced carriers in the oxide. The initial recombination of the carriers is considered in this model, taking into account the temperature effect. The general trends obtained with this model are in very good agreement with experimental data. It is also shown that the dose rate effect depends significantly on oxide quality

Keywords

bipolar transistors; electron traps; electron-hole recombination; hole traps; semiconductor device models; bipolar junction transistors; low-dose-rate effect; oxide; physical model; radiation-induced carrier recombination; radiation-induced carrier trapping; temperature effect; Degradation; Electron optics; Electron traps; Equations; Luminescence; Optical sensors; Space charge; Space technology; Spontaneous emission; Temperature sensors; Bipolar junction transistor; elevated temperature irradiation; enhanced low-dose-rate sensitivity (ELDRS); initial recombination; switching experiment; total dose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.886008

Filename

4033255