A closed-form analytical forward transit time model considering specific models for bandgap-narrowing effects and concentration-dependent diffusion coefficients for BJT devices operating at 77 K

Author

Lu, Tao-Cheng ; Kuo, James B.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

40

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

766

Lastpage

772

Abstract

The authors report a closed-form analytical low-temperature forward transit time model considering bandgap-narrowing effects and concentration-dependent diffusion coefficients based on the entire shape of the emitter and base doping profiles for bipolar junction transistor (BJT) devices operating at 77 K. As verified by the PISCES simulation results, the new closed-form analytical model provides a better low-temperature forward transit time model compared to the model in which bandgap-narrowing effects and concentration-dependent diffusion coefficients are not considered

Keywords

bipolar transistors; doping profiles; semiconductor device models; 77 K; PISCES simulation; bandgap-narrowing effects; bipolar junction transistor; closed-form analytical model; concentration-dependent diffusion coefficients; doping profiles; forward transit time model; low-temperature operation; Analytical models; Degradation; Doping profiles; Forward contracts; Frequency; Performance gain; Photonic band gap; Semiconductor process modeling; Shape; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.202789

Filename

202789