• DocumentCode
    870347
  • Title

    Neutron-Induced Single Event Effects Testing Across a Wide Range of Energies and Facilities and Implications for Standards

  • Author

    Dyer, Clive ; Hands, Alex ; Ford, Karen ; Frydland, Adam ; Truscott, Peter

  • Author_Institution
    Space Div., QinetiQ, Farnborough
  • Volume
    53
  • Issue
    6
  • fYear
    2006
  • Firstpage
    3596
  • Lastpage
    3601
  • Abstract
    Neutron test data on single event effects for a wide range of SRAMs, facilities (monoenergetic and continuum) and energies (thermal to 800 MeV) are compared. Many modern devices are found to be sensitive to thermal neutrons and rates from this source can dominate in many situations. A significant number of devices suffer latchup and the cross-sections increase with operating voltage and beam energy implying that most test facilities will underestimate the problem for the natural atmospheric environment. Upset sensitivity at 3-5 MeV varies from 5 to 600 less than at high energies and will be of most significance for sources of fission neutrons. These results are related to current and developing standards
  • Keywords
    SRAM chips; integrated circuit testing; neutron effects; neutron sources; standards; 3 to 5 MeV; SRAM; beam energy; fission neutron sources; latchup process; natural atmospheric environment; neutron test data; neutron-induced single event effects testing; operating voltage; standards; test facilities; thermal neutrons; Aerospace electronics; Cosmic rays; Helium; Neutrons; Protons; Single event upset; Standards development; Test facilities; Testing; Voltage; Neutrons; protons; single event effects; standards;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.886207
  • Filename
    4033410