• DocumentCode
    870389
  • Title

    Sensitive optical gating of reverse-biased AlGaAs/GaAs optothyristors for pulsed power switching applications

  • Author

    Zhao, Jian H. ; Burke, Terence ; Larson, Dana ; Weiner, Maurice ; Chin, Albert ; Ballingall, James M. ; Yu, Tan-hau

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
  • Volume
    40
  • Issue
    4
  • fYear
    1993
  • fDate
    4/1/1993 12:00:00 AM
  • Firstpage
    817
  • Lastpage
    823
  • Abstract
    A heterojunction-based optothyristor has been fabricated and tested with biasing field intensity up to 34 kV/cm for pulsed power applications. The reverse-biased optothyristor can even be triggered by a light-emitting diode (LED) of a few microwatts power, and more than 500 times reduction in the required LED power for triggering has been observed when compared to bulk photoconductive switches. The optothyristor, however, does not turn on under similar triggering conditions if bias polarity is changed. The sensitive optical gating of the reverse-biased optothyristor is explained. The turn-on delay time under reverse bias has been found to be inversely proportional to the square root of the LED power. The possibility of improving the switching efficiency by superimposing the laser pulse on a constant lower level background illumination has been demonstrated
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; photoelectric devices; pulsed power technology; thyristors; AlGaAs-GaAs; LED power; bias polarity; biasing field intensity; constant lower level background illumination; heterojunction-based optothyristor; laser pulse; light-emitting diode; pulsed power switching applications; reverse-biased optothyristor; semiconductors; sensitive optical gating; switching efficiency; turn-on delay time; Delay effects; Gallium arsenide; Light emitting diodes; Lighting; Optical pulses; Optical sensors; Optical switches; Photoconductivity; Photothyristors; Testing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.202796
  • Filename
    202796