• DocumentCode
    870452
  • Title

    Comments on Transient analysis of stored charge in neutral base region [with reply]

  • Author

    Parker, Julian ; Suzuki, Kenji ; Satoh, S. ; Nakayama, Naoyuki

  • Author_Institution
    Texas Instrument Inc., Dallas, TX, USA
  • Volume
    40
  • Issue
    4
  • fYear
    1993
  • fDate
    4/1/1993 12:00:00 AM
  • Firstpage
    833
  • Lastpage
    835
  • Abstract
    The commenter addresses questions raised in the above-titled paper by K. Suzuki et al. (ibid., vol.39, p.1164-9, May 1992) concerning the validity of bipolar transistor models using the partitioned-charge (PC) approach for transient simulations. Suzuki et al. assert that the concept of charge partitioning applies only to discharge transients and thus the charge-partition ratio depends on the sign of the emitter-base voltage gradient, which, if true, would greatly reduce the utility of PC-based models. The commenter shows that this is not the case and that their conclusion is due only to a misinterpretation of the PC model. The authors reply.<>
  • Keywords
    bipolar transistors; semiconductor device models; transients; bipolar transistor models; charge-partition ratio; comments; partitioned charge based models; reply; stored charge in neutral base region; transient analysis; transient simulations; Charge coupled devices; Dark current; Equations; Fluctuations; Frequency; Physics; Schottky diodes; Semiconductor diodes; Semiconductor process modeling; Transient analysis;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.202801
  • Filename
    202801