DocumentCode
870465
Title
Static and dynamic behaviour of transistors in the avalanche region
Author
Spirito, P.
Volume
6
Issue
2
fYear
1971
fDate
4/1/1971 12:00:00 AM
Firstpage
83
Lastpage
87
Abstract
The behavior has been studied assuming that the transistor is acting as a nonlinear negative resistance dipole, defined from its I-V characteristics. A simple method has been obtained to plot the static characteristic with good accuracy. Then the nonlinear differential equations for a simple switching circuit are graphically solved and the theory is compared with the experimental results.
Keywords
Transistors; transistors; Capacitance; Circuits; Frequency dependence; Inductance; Nonlinear equations; Output feedback; Silicon; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1971.1049655
Filename
1049655
Link To Document