• DocumentCode
    870696
  • Title

    Microdose Induced Data Loss on Floating Gate Memories

  • Author

    Guertin, Steven M. ; Nguyen, Duc N. ; Patterson, Jeffrey D.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
  • Volume
    53
  • Issue
    6
  • fYear
    2006
  • Firstpage
    3518
  • Lastpage
    3524
  • Abstract
    Heavy ion irradiation of flash memories shows loss of stored data. The fluence dependence is indicative of microdose effects. Other qualitative factors identifying the effect as microdose are discussed. The data is presented, and compared to statistical results of a microdose target-based model
  • Keywords
    flash memories; losses; radiation effects; SEU; data loss; flash memories; floating gate memories; heavy ion irradiation; microdose target-based model; statistical results; Circuits; EPROM; Electrons; Flash memory; Mission critical systems; Nonvolatile memory; Propulsion; Space technology; Space vehicles; Threshold voltage; Flash; SEU; floating gate; microdose;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.885861
  • Filename
    4033529
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=870696