DocumentCode
871175
Title
Hole Trapping, Recombination and Space Charge in Irradiated Sandia Oxides
Author
Hughes, R.C. ; Seager, C.H.
Volume
30
Issue
6
fYear
1983
Firstpage
4049
Lastpage
4053
Abstract
A computer model for calculating radiation effects in MOS oxides is presented. Good agreement is obtained between theory and photoconductivity experiments (photo-current and flat band shift as a function of total dose) on Sandia radiation hard oxides. It is also shown that doses above 108 rads (delivered by a focused electron beam) are required to produce a significant number of new defect traps.
Keywords
Charge carrier processes; Charge measurement; Current measurement; Dielectrics; Electron traps; Microelectronics; Photoconductivity; Radiation effects; Radiative recombination; Space charge;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1983.4333079
Filename
4333079
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