DocumentCode
871452
Title
Silicon Transistor Biasing for Linear Collector Current Temperature Dependence
Author
Brugler, J.S.
Volume
2
Issue
2
fYear
1967
fDate
6/1/1967 12:00:00 AM
Firstpage
57
Lastpage
58
Abstract
The silicon transistor base bias voltage necessary for linearly increasing collector current with temperature is derived. A constant voltage is shown to be adequate in practical applications, enabling temperature-independent small-signal diode conductance to be simply obtained.
Keywords
Linear circuits; Silicon materials/devices; Transistors; Delay; Equations; Feedback circuits; Hysteresis; Negative feedback; Resistors; Silicon; Switching circuits; Temperature dependence; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1967.1049790
Filename
1049790
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