Wide temperature operation of 40-Gb/s 1550-nm electroabsorption modulated lasers

Author

Saravanan, Brem Kumar ; Wenger, Thomas ; Hanke, Christian ; Gerlach, Philipp ; Peschke, Martin ; Macaluso, Roberto

Author_Institution

Optoelectron. Dept., Univ. of Ulm, Germany

Volume

18

Issue

7

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

862

Lastpage

864

Abstract

Electroabsorption modulated lasers (EMLs) exploiting the quantum confined Stark effect need thermoelectric coolers to achieve stable output power levels and dynamic extinction ratios. Temperature-independent operation is reported between 20°C and 70°C for InGaAlAs-InP-based monolithically integrated 1550-nm EMLs exploiting a shared active area at 40 Gb/s by actively controlling the electroabsorption modulator bias voltage. Dynamic extinction ratios of at least 8 dB and fiber-coupled mean modulated optical power of at least 0.85 mW are obtained over the mentioned temperature range.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium compounds; indium compounds; optical communication equipment; optical fibre couplers; quantum confined Stark effect; semiconductor lasers; 1550 nm; 20 to 70 degC; 40 Gbit/s; InGaAlAs-InP; electroabsorption modulated lasers; extinction ratios; fiber-coupled mean modulated optical power; quantum confined Stark effect; thermoelectric coolers; Extinction ratio; Laser stability; Optical modulation; Potential well; Power generation; Power lasers; Stark effect; Temperature control; Thermoelectricity; Voltage control; Electroabsorption; modulation; quantum confined Stark effect (QCSE); wide temperature operation;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.871813

Filename

1608187