Comments on “High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm”

Author

Thayne, Iain G. ; Hill, Richard J W ; Moran, David A J ; Kalna, Karol ; Asenov, Asen ; Passlack, Matthias

Author_Institution

Nanoelectron. Res. Centre, Univ. of Glasgow, Glasgow, UK

Volume

29

Issue

10

fYear

2008

Firstpage

1085

Lastpage

1086

Abstract

We have a number of issues with the above paper ldquoHigh Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Current Exceeding 1 A/mm,rdquo by Y. Xuan, Y. Q. Wu, and P. D. Ye, published IEEE Electron Device Letters in April 2008 which we wish to highlight.

Keywords

III-V semiconductors; MOSFET; electric current; electron beam lithography; gallium arsenide; indium; integrated circuit metallisation; InGaAs; MOSFET; drain current; electron beam lithography; semiconductor device fabrication; semiconductor device measurements; semiconductor device metallization; Fabrication; Indium gallium arsenide; Lithography; Logic devices; MOSFET circuits; Metallization; Semiconductor device measurement; Semiconductor devices; Threshold voltage; Transconductance; Electron beam lithography; semiconductor device fabrication; semiconductor device measurements; semiconductor device metallization; semiconductor devices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2002752

Filename

4631461