On the charge control of the two-dimensional electron gas for analytic modeling of HEMTs

Author

Shey, An-Jui ; Ku, Walter H.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

9

Issue

12

fYear

1988

Firstpage

624

Lastpage

626

Abstract

A simple charge control model is developed for the two-dimensional electron gas (2-DEG) of high-electron-mobility transistors (HEMTs). This model explicitly takes into account the effective distance of the 2-DEG from the heterointerface and has been developed for use in analytic I-V and C-V modeling. In this model, the Fermi energy level versus the 2-DEG sheet carrier-concentration is represented by a simplified expression derived from the triangular potential well approximation and is shown to be dominated by terms with different functional forms in two distinct operation regions: a moderate carrier-concentration region and a subthreshold region. The validity of the analytic charge control model is supported by the calculated results of a self-consistent quantum mechanical model.<>

Keywords

carrier density; electron gas; high electron mobility transistors; semiconductor device models; C-V modeling; Fermi energy level; HEMTs; I-V modeling; analytic modeling; charge control model; high-electron-mobility transistors; moderate carrier-concentration region; self-consistent quantum mechanical model; sheet carrier-concentration; subthreshold region; triangular potential well approximation; two-dimensional electron gas; Electrons; Energy states; HEMTs; MODFETs; Poisson equations; Potential well; Quantum mechanics; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.20416

Filename

20416