Self-aligned germanium MOSFETs using a nitrided native oxide gate insulator

Author

Rosenberg, James J. ; Martin, Suzanne C.

Author_Institution

Div. of Eng., Brown Univ., Providence, RI, USA

Volume

9

Issue

12

fYear

1988

Firstpage

639

Lastpage

640

Abstract

The fabrication and performance of dummy-gate self-aligned germanium MOSFETs utilizing a native germanium oxynitride gate insulator is reported. Based on device characteristics, channel mobility at 300 K is estimated as 940 cm/sup 2//Vs. Common-source characteristics show good saturation and turn-off, and do not exhibit looping or other anomalies. It is felt these results suggest that integration of germanium MOSFETs with photodiodes for monolithic optical-fiber receivers operating at 1.3- mu m wavelength should be possible. The results also indicate that the bulk mobility advantage which germanium exhibits relative to silicon carries over in some measure to FET channel mobility.<>

Keywords

carrier mobility; elemental semiconductors; germanium; germanium compounds; insulated gate field effect transistors; integrated optoelectronics; 1.3 micron; Ge-GeO/sub x/N/sub y/; bulk mobility; channel mobility; common source characteristics; fabrication; gate insulator; monolithic optical-fiber receivers; optoelectronic integration; photodiodes; saturation; self-aligned MOSFET; turn-off; Fabrication; Germanium; Insulation; Integrated optics; MOSFETs; Optical receivers; Optical saturation; Photodiodes; Silicon; Wavelength measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.20421

Filename

20421