DocumentCode
872474
Title
New method for measuring carrier concentration profile near a GaAs surface through a network analyzer
Author
Fukai, Y.K. ; Muraguchi, Masahiro
Author_Institution
Electr. Commun. Labs., NTT Corp., Tokyo, Japan
Volume
9
Issue
2
fYear
1988
Firstpage
74
Lastpage
76
Abstract
A method based on S-parameter measurement which precisely obtains the junction capacitance of the Schottky gate of GaAs MESFETs is proposed. In this method the junction capacitance is derived from a diode circuit simulation based on S-parameter measurements. Determination of the junction capacitance under forward-biased voltage and the carrier concentration profile near the channel surface of Schottky gates are possible with this method.<>
Keywords
III-V semiconductors; S-parameters; Schottky gate field effect transistors; capacitance measurement; carrier density; gallium arsenide; network analysers; semiconductor device testing; GaAs; GaAs surface; MESFETs; S-parameter measurement; Schottky gate; carrier concentration profile; diode circuit simulation; forward-biased voltage; junction capacitance; network analyzer; Capacitance measurement; Circuits; Contact resistance; FETs; Frequency measurement; Gallium arsenide; MESFETs; Scattering parameters; Schottky diodes; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.2045
Filename
2045
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