• DocumentCode
    872710
  • Title

    Electron-beam vapour-deposited erbium-doped glass waveguide laser at 1.53 mu m

  • Author

    Nakazawa, Masataka ; Kimura, Yuichi

  • Author_Institution
    R&D Centre, NTT Telecommun. Field Syst., Ibaraki, Japan
  • Volume
    28
  • Issue
    22
  • fYear
    1992
  • Firstpage
    2054
  • Lastpage
    2056
  • Abstract
    A single-transverse-mode erbium-doped glass waveguide laser operating at a wavelength of g 1.53 mu m is described. The erbium-doped GeO2-SiO2 core of the waveguide was made by electron-beam vapour deposition and patterned by reactive ion etching on a quartz glass substrate. The core was 10 mu m wide, 8 mu m high and 64.5 mm long, which permitted single-transverse-mode laser oscillation. The threshold pump power for CW oscillation was 150 approximately 200 mW at a pumping wavelength of 0.98 mu m.
  • Keywords
    electron beam deposition; erbium; integrated optics; optical waveguides; optical workshop techniques; solid lasers; sputter etching; 1.53 micron; 150 to 200 mW; CW oscillation; Er doped glass waveguide laser; GeO 2-SiO 2:Er; SiO 2; electron-beam vapour deposition; quartz glass substrate; reactive ion etching; single transverse mode laser; threshold pump power;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921316
  • Filename
    204576