• DocumentCode
    873300
  • Title

    Gallium phosphide epitaxial layers with high mobility

  • Author

    Nicklin, R. ; Russell, A.W. ; Newman, P.C.

  • Author_Institution
    Plessey Co. Limited., Allen Clark Research Centre, Towcester, UK
  • Volume
    3
  • Issue
    8
  • fYear
    1967
  • fDate
    8/1/1967 12:00:00 AM
  • Firstpage
    363
  • Abstract
    Measurements on epitaxial layers of GaP, containing negligible amounts of GaAs, have yielded mobilities up to 200cm2/Vs at room temperature, and a peak value of 1480cm2/Vs. The residual impurity appears to be Si.
  • Keywords
    films; gallium compounds; semiconductor materials; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19670279
  • Filename
    4207329
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=873300