• DocumentCode
    873325
  • Title

    A noise model for the distributed transistor

  • Author

    Patterson, John D.

  • Volume
    4
  • Issue
    2
  • fYear
    1969
  • fDate
    4/1/1969 12:00:00 AM
  • Firstpage
    75
  • Lastpage
    80
  • Abstract
    A transistor model having a distributed base region and distributed sources of noise is analyzed. An equivalent lumped-noise model is derived. The model includes all the conventional sources of shot noise and thermal noise in the base region. It is found that the transistor shot noise is uneffected by the distributed nature of the base. Mean-square thermal noise is found to be proportional to the real part of a complex base impedance. An excess noise source due to the distributed base is found but is shown to be negligible compared to thermal noise generated in the base. The distributed-noise model reduces to the conventional lumped-noise model at low frequencies.
  • Keywords
    Bipolar transistors; Noise; Semiconductor device models; bipolar transistors; noise; semiconductor device models; Active noise reduction; Circuit noise; Frequency; Geometry; Impedance; Low-frequency noise; Noise generators; Thermal resistance; Transmission lines; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1969.1049962
  • Filename
    1049962