DocumentCode
873325
Title
A noise model for the distributed transistor
Author
Patterson, John D.
Volume
4
Issue
2
fYear
1969
fDate
4/1/1969 12:00:00 AM
Firstpage
75
Lastpage
80
Abstract
A transistor model having a distributed base region and distributed sources of noise is analyzed. An equivalent lumped-noise model is derived. The model includes all the conventional sources of shot noise and thermal noise in the base region. It is found that the transistor shot noise is uneffected by the distributed nature of the base. Mean-square thermal noise is found to be proportional to the real part of a complex base impedance. An excess noise source due to the distributed base is found but is shown to be negligible compared to thermal noise generated in the base. The distributed-noise model reduces to the conventional lumped-noise model at low frequencies.
Keywords
Bipolar transistors; Noise; Semiconductor device models; bipolar transistors; noise; semiconductor device models; Active noise reduction; Circuit noise; Frequency; Geometry; Impedance; Low-frequency noise; Noise generators; Thermal resistance; Transmission lines; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1969.1049962
Filename
1049962
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