• DocumentCode
    873479
  • Title

    Low-light-level properties of the phototransistor charge-storage mode

  • Author

    Brugler, J.S.

  • Volume
    4
  • Issue
    3
  • fYear
    1969
  • fDate
    6/1/1969 12:00:00 AM
  • Firstpage
    136
  • Lastpage
    144
  • Abstract
    The phototransistor charge-storage or integration mode at low light levels is described accurately using a simple model. The base-emitter junction governs charge readout at low levels, causing very nonlinear circuit behavior. Sluggish transient response, increased sensitivity of output to transistor current gain, and a nonlinear transfer characteristic degrade phototransistor low-light-level behavior more severely than junction dark current.
  • Keywords
    Phototransistors; Space charge; phototransistors; space charge; Bandwidth; Dark current; Degradation; Image storage; Leakage current; Linearity; Magnetic separation; Phototransistors; Solid state circuits; Transient response;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1969.1049976
  • Filename
    1049976
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=873479