DocumentCode
875233
Title
Reduction of kink effect in thin-film SOI MOSFETs
Author
Colinge, Jean-Pierre
Author_Institution
Hewlett-Packard Labs., Palo Alto, CA, USA
Volume
9
Issue
2
fYear
1988
Firstpage
97
Lastpage
99
Abstract
Numerical simulation is used to show that potential and electric field distribution within thin, fully depleted SOI devices is quite different from that observed within thicker, partially depleted devices. Reduction of drain electric field and of source potential barrier brings about a dramatic decrease of kink effect.<>
Keywords
electric potential; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; SOI MOSFET; drain electric field; electric field distribution; kink effect; numerical simulation; potential distribution; source potential barrier; Circuits; Impact ionization; MOSFETs; Oxidation; Semiconductor films; Silicon; Substrates; Thin film devices; Thin film transistors; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.2052
Filename
2052
Link To Document