Vertical-cavity surface-emitting laser diodes fabricated by in situ dry etching and molecular beam epitaxial regrowth

The authors report the first buried active region vertical-cavity surface-emitting laser diodes fabricated using in situ dry etching and molecular beam epitaxial regrowth. The laser emissions of the etched/regrown devices persist over a greater current range and exhibit maximum output powers larger than air-post lasers. The lasers are anisotropically etched into the lower monolithic distributed Bragg reflector using an electron cyclotron resonance SiCl/sub 4/ plasma etch. After transfer in ultra-high vacuum, epitaxial AlGaAs current blocking layers are regrown around the etched mesas. Polycrystalline deposition on the SiO/sub 2/ mask is removed by reactive ion etching to allow electrical contact and top surface emission. The etched/regrown laser characteristics demonstrate efficient current confinement and low thermal impedance. The vacuum integrated processing described offers the prospect of further device performance enhancements and greater functionality.<>