• DocumentCode
    875704
  • Title

    Radiation Hardness of a Silicon MESFET 4K Ã\x97 1 sRAM

  • Author

    Houston, T.W. ; Hite, L.R. ; Darley, H.M. ; Shedd, W.M. ; Zugich, M.H. ; Lapierre, D.C.

  • Author_Institution
    Texas Instruments Incorporated Dallas, Texas 75265
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1483
  • Lastpage
    1486
  • Abstract
    A comprehensive study of the radiation hardness of the silicon MESFET technology using LOCOS isolation is reported. A MESFET 4K × 1 sRAM fabricated on bulk silicon using LOCOS isolation has essentially no change in performance through 28.5 Mrad(Si) total gamma dose, the maximum dose tested. Transient gamma upset of the memory occurs at 1 × 107 Rad(Si)/s. Discrete MESFET and LOCOS device characteristics are also reported as a function of total gamma dose.
  • Keywords
    Aluminum; Bonding; Circuit testing; Gold; Implants; MESFETs; MOS devices; Samarium; Silicon; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333534
  • Filename
    4333534
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875704