• DocumentCode
    876224
  • Title

    Microwave conductivity of polar semiconductors in the presence of a high electric field

  • Author

    Kopetz, H. ; Pötzl, H.W.

  • Author_Institution
    Technische Hochschule Wien, Institute of Physical Electronics, Wien, Austria
  • Volume
    4
  • Issue
    5
  • fYear
    1968
  • Firstpage
    79
  • Lastpage
    80
  • Abstract
    Theoretical results are presented for the small-signal microwave conductivity of nInSb at TL = 77°K in the presence of a high d.c. field directed parallel or perpendicular to the microwave field. Reasonable agreement with experiments by Richter and Bonek is demonstrated. At frequencies below 50GHz, the parallel microwave conductivity is smaller than the perpendicular one, whereas the opposite is true at 70GHz.
  • Keywords
    III-V semiconductors; electrical conductivity; high-frequency measurement; indium compounds; semiconductors; transport processes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680063
  • Filename
    4210010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=876224