DocumentCode
876632
Title
(110)-oriented GaAs MESFETs
Author
Pao, Y.C. ; Ou, Weiming ; Harris, J.S., Jr.
Author_Institution
Varian Associates, Santa Clara, CA, USA
Volume
9
Issue
3
fYear
1988
fDate
3/1/1988 12:00:00 AM
Firstpage
119
Lastpage
121
Abstract
GaAs metal semiconductor field-effect transistors (MESFETs) have been successfully fabricated on molecular-beam epitaxial (MBE) films grown on the off-axis
Keywords
III-V semiconductors; Schottky gate field effect transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; 0.12 micron; 0.18 micron; 0.4 micron; 23 GHz; 56 GHz; GaAs; MBE; MESFET devices; MESFETs; contact layer; device quality two-dimensional MBE growth; doping density; extrinsic transconductance; high-speed digital circuits; low-gate leakage current; metal semiconductor field-effect transistors; microwave power FET; output conductance; unity-current-gain cutoff frequency; Conducting materials; Cutoff frequency; Doping; FETs; Gallium arsenide; Leakage current; MESFETs; Molecular beam epitaxial growth; Semiconductor films; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.2061
Filename
2061
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