DocumentCode
876665
Title
Subthreshold current ion GaAs MESFETs
Author
Conger, J. ; Peczalski, Andrzej ; Shur, Michael S.
Author_Institution
Honeywell, Minneapolis, MN, USA
Volume
9
Issue
3
fYear
1988
fDate
3/1/1988 12:00:00 AM
Firstpage
128
Lastpage
129
Abstract
The authors present experimental data that show that the drain-to-source voltage dependence of the subthreshold current in GaAs MESFETs is determined by the variation of threshold voltage with drain-source voltage and not by Schottky-barrier lowering. This model, incorporating gate-to-drain and gate-to-source diode currents, is shown to be in good agreement with measured data. The model is incorporated into a GaAs circuit simulator and is suitable for GaAs IC design.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; GaAs; IC design; MESFETs; circuit simulator; diode currents; drain-to-source voltage dependence; subthreshold current; threshold voltage; Circuit simulation; Equations; Gallium arsenide; Implants; MESFETs; Schottky diodes; Subthreshold current; Threshold current; Threshold voltage; Voltage measurement;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.2064
Filename
2064
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