• DocumentCode
    877054
  • Title

    Modified theory of the current/voltage relation in silicon p--n junctions

  • Author

    Faulkner, E.A. ; Buckingham, M.J.

  • Author_Institution
    University of Reading, J.J. Thomson Laboratory, Reading, UK
  • Volume
    4
  • Issue
    17
  • fYear
    1968
  • Firstpage
    359
  • Lastpage
    360
  • Abstract
    If the theory of Sah, Noyce and Shockley is modified by assuming the recombination centres to be nonuniformly distributed, a current/voltage relation can be obtained in the form I ∝ exp (eV/mkT), where m lies between 1 and 2.
  • Keywords
    semiconductor junctions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680282
  • Filename
    4210099
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=877054