DocumentCode
878442
Title
High-efficiency avalanche-resonance pumped amplification
Author
Hoefflinger, B. ; Snapp, C.P. ; Stark, L.A.
Author_Institution
Cornell University, School of Electrical Engineering, Ithaca, USA
Volume
5
Issue
3
fYear
1969
Firstpage
43
Lastpage
45
Abstract
Microwave amplification has been obtained from silicon diodes operated in avalanche-resonance pumped modes. D.C.-r.f. conversion efficiencies were 25% at 1.3GHz for a saturation gain of 12dB and a bandwidth of 3%.
Keywords
high-frequency amplifiers; microwave devices; semiconductor diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19690029
Filename
4210248
Link To Document