• DocumentCode
    878523
  • Title

    Numerical calculations of the capacitance of linearly graded Si p-n junctions

  • Author

    Nuyts, W. ; Overstraeten, R. J Van

  • Author_Institution
    Katholieke Universiteit Leuven, Laboratorium voor Fysika en Elektronica van de Halfgeleiders, Departement Elektriciteit, Heverlee, Belgium
  • Volume
    5
  • Issue
    3
  • fYear
    1969
  • Firstpage
    54
  • Lastpage
    55
  • Abstract
    Exact calculations are made of the capacitance of linearly graded Si p-n junctions, taking the influence of electrons and holes into account. The results agree well with the experimental data for gradients of less than 1022cm¿4. The discrepancies for gradients larger than 1022cm¿4 are probably due an interface-state mechanism.
  • Keywords
    capacitance; semiconductor junctions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19690037
  • Filename
    4210256
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=878523