A monolithic silicon wide-band amplifier from DC to 1 GHz

Author

Coughlin, J. Bernard ; Gelsing, Rik J H ; Jochems, Pieter J W ; Van Der Laak, Henk J M

Volume

8

Issue

6

fYear

1973

Firstpage

414

Lastpage

419

Abstract

Monolithic integration of a wide-band amplifier with uniform gain from dc to 1 GHz is described. By choosing an essentially simple circuit both for construction and evaluation it is shown that the collective application of microwave transistor diffusions, double layer interconnections, beam leads, air isolation, and microstriplines on ceramic substrates extends the range of operation to beyond 1 GHZ. Gain values of 12 dB flat within 0.5 dB for a two- stage amplifier and nearly 50 dB flat within 1 dB for cascaded amplifiers from low frequencies to 1 GHz are achieved. The direction for further technological improvements is indicated.

Keywords

Linear integrated circuits; Microwave amplifiers; Monolithic integrated circuits; Solid-state microwave devices; Wideband amplifiers; linear integrated circuits; microwave amplifiers; monolithic integrated circuits; solid-state microwave devices; wideband amplifiers; Broadband amplifiers; Ceramics; Frequency; Integrated circuit interconnections; Microstrip; Microwave circuits; Microwave transistors; Monolithic integrated circuits; Silicon; Structural beams;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1973.1050431

Filename

1050431