• DocumentCode
    878967
  • Title

    Multiquantum well strained-layer lasers with improved low frequency response and very low damping

  • Author

    Lester, L.F. ; O´Keefe, S.S. ; Schaff, W.J. ; Eastman, L.F.

  • Author_Institution
    Cornell Univ., Ithaca, NY, USA
  • Volume
    28
  • Issue
    4
  • fYear
    1992
  • Firstpage
    383
  • Lastpage
    385
  • Abstract
    Strained-layer In0.3Ga0.7As/GaAs multiquantum well lasers fabricated by chemically assisted ion beam etching have achieved a record 3 dB modulation bandwidth of 28 GHz. The low frequency rolloff and nonlinear gain coefficient have been improved substantially by employing a separate confinement heterostructure design that has a fast carrier capture time.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; semiconductor quantum wells; sputter etching; 28 GHz; 3 dB modulation bandwidth; III-V semiconductors; In 0.3Ga 0.7As-GaAs; carrier capture time; chemically assisted ion beam etching; damping; low frequency response; low frequency rolloff; multiquantum well lasers; nonlinear gain coefficient; separate confinement heterostructure design; strained-layer lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920240
  • Filename
    126379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=878967