• DocumentCode
    879732
  • Title

    A Novel 4.5 \\hbox {F}^{2} Capacitorless Semiconductor Memory Device

  • Author

    Wang, Peng-Fei ; Gong, Yi

  • Author_Institution
    Oriental Semicond. Technol. Co., Ltd., Shanghai
  • Volume
    29
  • Issue
    12
  • fYear
    2008
  • Firstpage
    1347
  • Lastpage
    1348
  • Abstract
    This letter proposes a novel 4.5F2 capacitorless dynamic random access memory cell with a floating gate (FG) connected to drain via a gated p-n junction diode. The FG in the proposed memory device is for charge storage and can electrically be charged or discharged by current flowing through a gated p-n junction diode.
  • Keywords
    DRAM chips; memory architecture; semiconductor devices; capacitorless dynamic random access memory cell; capacitorless semiconductor memory device; charge storage; floating gate; Capacitorless dynamic random access memory (DRAM); MOSFET; floating-body cell;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.2005740
  • Filename
    4637839
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=879732