• DocumentCode
    879825
  • Title

    Enhanced avalanche multiplication factor and single-event burnout

  • Author

    Kuboyama, Satoshi ; Ikeda, Naomi ; Hirao, Toshio ; Matsuda, Sumio

  • Author_Institution
    Nat. Space Dev. Agency of Japan, Ibaraki, Japan
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • Firstpage
    2233
  • Lastpage
    2238
  • Abstract
    We describe experimental data for single-event burnout of bipolar junction transistors and the results of analysis using device simulators. The analysis indicates that the enhanced impact ionization rate in the ion track plays an essential role to trigger the burnout.
  • Keywords
    avalanche breakdown; bipolar transistors; impact ionisation; power MOSFET; radiation hardening (electronics); bipolar junction transistors; device simulators; enhanced avalanche multiplication factor; single-event burnout; Analytical models; Electrodes; Helium; Impact ionization; MOSFET circuits; Numerical simulation; Photonic band gap; Power MOSFET; Spectroscopy; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.820730
  • Filename
    1263865
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=879825