A new self-alignment technology using bridged base electrode for small-scaled AlGaAs/GaAs HBT´s

Author

Nagata, Koichi ; Nakajima, Osaake ; Nittono, Takumi ; Yamauchi, Yoshiki ; Ishibashi, Tadao

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

39

Issue

8

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

1786

Lastpage

1792

Abstract

The fabrication and characterization of a new self-aligned HBT utilizing bridged base-electrode technology (BBT) are presented. This new technology simplifies the fabrication process and relaxes the limitations in device size scaling, thus decreasing the emitter size to 1 μm×1 μm. In spite of a large junction periphery area ratio, a good current gain of more than 10 is obtained in an HBT with an emitter size of 1 μm×1 μm. A series of fabricated HBTs shows excellent high-speed performance. The highest values of f_T=90 GHz and f_max=63 GHz are obtained in an HBT with an emitter size of 1 μm×5 μm. The realization of HBTs with small emitters and excellent high-frequency characteristics demonstrates the effectiveness of this new technology

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; 1 micron; 63 GHz; 90 GHz; bridged base-electrode technology; current gain; device size scaling; emitter size; heterojunction bipolar transistor; high-frequency characteristics; self-aligned HBT; self-alignment technology; semiconductor; small scaled AlGaAs-GaAs transistor; Bipolar transistors; Capacitance; Delay; Electrodes; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Large scale integration; Power dissipation; Ring oscillators;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.144665

Filename

144665