• DocumentCode
    880049
  • Title

    Impact of mechanical stress on total-dose effects in bipolar ICs

  • Author

    Boch, J. ; Fleetwood, D.M. ; Schrimpf, R.D. ; Cizmarik, R.R. ; Saigné, F.

  • Author_Institution
    Univ. de Reims, France
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • Firstpage
    2335
  • Lastpage
    2340
  • Abstract
    Experiments conducted at high and low dose rates show that the total dose response of bipolar linear integrated circuits is influenced by mechanical stress. The role of mechanical stress on enhanced low dose rate sensitivity is discussed.
  • Keywords
    X-ray effects; bipolar analogue integrated circuits; gamma-ray effects; interface states; passivation; radiation hardening (electronics); stress effects; bipolar linear integrated circuits; enhanced low dose rate sensitivity; mechanical stress; numerical simulations; passivation layer; radiation response; total dose response; Analog integrated circuits; Bipolar transistors; Capacitive sensors; Circuit simulation; Computational modeling; Computer simulation; Electric variables; Electronic switching systems; Passivation; Tensile stress;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.820768
  • Filename
    1263882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=880049