SEE characterization of vertical DMOSFETs: an updated test protocol

Author

Titus, Jeffrey L. ; Wheatley, C. Frank

Author_Institution

NAVSEA Crane, IN, USA

Volume

50

Issue

6

fYear

2003

Firstpage

2341

Lastpage

2351

Abstract

The test protocols for power MOSFETs used in the manufacturer´s specification sheets are inadequate in that they do not represent a realistic worst-case condition. In addition, the applicable single-event effects (SEE) test methods and guidelines do not provide sufficient details to the user as to what conditions should be used, placing an undue burden on them. This paper addresses several of these deficiencies and others. We present a new test protocol; we suggest a new approach to describe the SEE response; and we provide a model to predict critical ion energies that should produce a worst-case response.

Keywords

impact ionisation; ion beam effects; power MOSFET; radiation hardening (electronics); semiconductor device breakdown; semiconductor device testing; LET profile; SEE characterization; breakdown voltage; critical ion energies; ion energy model; penetration depth; power MOSFET; single-event burnout; single-event gate rupture; updated test protocol; vertical DMOSFET; worst-case response; Atomic layer deposition; Cranes; Guidelines; Life testing; MOSFETs; Manufacturing; Predictive models; Protocols; Semiconductor process modeling; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2003.820733

Filename

1263883