A 0.13 μm CMOS front-end, for DCS1800/UMTS/802.11b-g with multiband positive feedback low-noise amplifier

Author

Liscidini, Antonio ; Brandolini, Massimo ; Sanzogni, Davide ; Castello, Rinaldo

Author_Institution

Dipt. di Elettronica, Pavia Univ., Italy

Volume

41

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

981

Lastpage

989

Abstract

This paper presents a fully integrated CMOS receiver front-end based on a direct conversion architecture for UMTS/802.11b-g and a low-IF architecture at 100 kHz for DCS1800. The two key building blocks are a multiband low-noise amplifier (LNA) that uses positive feedback to improve its gain and a highly linear mixer. The front-end, integrated in a 0.13 μm CMOS process, exhibits a minimum noise figure of 5.2 dB, a programmable gain that can be varied from 13.5 to 28.5 dB, an IIP3 of more than -7.5 dBm and an IIP2 better than 50 dBm. The total current consumption is 20mA from a 1.2V supply.

Keywords

3G mobile communication; CMOS integrated circuits; cellular radio; feedback amplifiers; low noise amplifiers; receivers; 0.13 micron; 1.2 V; 100 kHz; 20 mA; 5.2 dB; CMOS front-end; CMOS process; CMOS receiver front-end; DCS 1800; UMTS; current consumption; direct conversion architecture; low-IF architecture; multiband low-noise amplifier; multiband positive feedback amplifier; programmable gain; 3G mobile communication; CMOS technology; Costs; Energy consumption; Feedback; Hardware; Low-noise amplifiers; Noise figure; Radio frequency; Transceivers; CMOS; RF receiver; direct conversion; feedback amplifier; high linearity; low-noise amplifier (LNA); mixer; multiband; multistandard; positive feedback;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2006.870890

Filename

1610642