Developer selection for T-shaped gate FET´s using PMMA/P[MMA-co-MAA]/PMMA

Author

Lamarre, Philip A.

Author_Institution

Raytheon Co., Lexington, MA, USA

Volume

39

Issue

8

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

1844

Lastpage

1848

Abstract

A T-shaped gate fabrication process has been developed based on a triple-layer resist system with gate cross section control by resist developer formulation. The new procedure allows a conventional e-beam exposure and single develop step to accomplish what requires position dependent e-beam doses or multiple exposures and multiple develop steps in other processes. General considerations in developer selection are discussed. For the process conditions used in this study, gate lengths from 80 to 280 nm were obtained from doses from 250 to 350 μC/cm² with 20-keV electrons. Initial results on RF performance for a 1.2-mm periphery power FET are given

Keywords

electron beam effects; electron resists; field effect transistors; polymer films; semiconductor technology; solid-state microwave devices; 20 keV; 80 to 280 nm; PMMA/P[MMA-co-MAA]/PMMA; RF performance; T-shaped gate fabrication process; developer selection; e-beam exposure; gate cross section control; gate lengths; power FET; resist developer formulation; triple-layer resist system; Chaos; Control systems; Electrons; FETs; Fabrication; Gallium arsenide; Manufacturing processes; Polymers; Resists; Solvents;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.144673

Filename

144673