DocumentCode
881258
Title
A 16384-bit high-density CCD memory
Author
Rosenbaum, Stanley D. ; Chan, Chong Hon ; Caves, J. Terry ; Poon, Stewart C. ; Wallace, Robert W.
Volume
11
Issue
1
fYear
1976
Firstpage
33
Lastpage
40
Abstract
A 16384-bit charge-coupled device (CCD) memory has been developed for mass storage memory system application where moderate latency, high data rate and low system cost are required. The chip measures only 3.45/spl times/4.29 mm/SUP 2/ (136/spl times/169 mil/SUP 2/), fits a standard 16-pin package, and is organized as four separate shift registers of 4096 bits, each with its own data input and data output terminals. A two-level polysilicon gate n-channel process was used for device fabrication. A condensed serial-parallel-serial (CSPS) structure was found to provide the highest packing density. Only two external clocks are required driving capacitances of 60 pF each at one-half the data transfer rate. Operations at data rates of 100 kHz to 10 MHz have been demonstrated experimentally, the on-chip power dissipation at 10 MHz being less than 20 /spl mu/W/bit.
Keywords
Charge-coupled devices; Digital integrated circuits; Monolithic integrated circuits; Semiconductor storage devices; charge-coupled devices; digital integrated circuits; monolithic integrated circuits; semiconductor storage devices; Capacitance; Charge coupled devices; Chip scale packaging; Clocks; Costs; Delay; Fabrication; Measurement standards; Semiconductor device measurement; Shift registers;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1976.1050672
Filename
1050672
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