DocumentCode

881363

Title

Effects of electron irradiation of metal-nitride-semiconductor insulated gate field-effect transistors

Author

Wegener, H.A.R.

Volume

54

Issue

5

fYear

1966

fDate

5/1/1966 12:00:00 AM

Firstpage

784

Lastpage

785

Keywords

Charge carrier processes; Electron traps; FETs; Insulation; Leakage current; MOS devices; MOSFETs; Silicon; Voltage;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1966.4848

Filename

1446778