• DocumentCode
    881713
  • Title

    Optical pulse generation with high repetition rate by sinusoidally-driven InGaAs/InAlAs multiquantum well modulator

  • Author

    Wakita, Ken ; Kotaka, I. ; Mitomi, O. ; Asai, Hiroki ; Asobe, M.

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa, Japan
  • Volume
    29
  • Issue
    8
  • fYear
    1993
  • fDate
    4/15/1993 12:00:00 AM
  • Firstpage
    718
  • Lastpage
    719
  • Abstract
    A 20 GHz optical pulse train was generated by a sinusoidally-driven InGaAs/InAlAs multiquantum well intensity modulator operating at low voltages (from -2 to -3 V DC bias with a 3.2 V peak-to-peak RF signal). An approximately transform-limited optical pulse train width of 8 ps and a spectral width of 40 GHz were obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical modulation; pulse generators; semiconductor quantum wells; -3 to -2 V; 20 GHz; InGaAs-InAlAs; MQW; high repetition rate; intensity modulator; low voltages; multiquantum well modulator; optical pulse train; pulse generation; semiconductors; sinusoidally-driven;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930480
  • Filename
    209973