• DocumentCode
    881739
  • Title

    Low-threshold operation of tensile strained GaInP/AlGaInP MQW LDs emitting at 625 nm

  • Author

    Tanaka, T. ; Yanagisawa, H. ; Takimoto, Munehiro ; Yano, Sumio ; Minagawa, S.

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    29
  • Issue
    8
  • fYear
    1993
  • fDate
    4/15/1993 12:00:00 AM
  • Firstpage
    722
  • Lastpage
    724
  • Abstract
    A low threshold current of 47 Ma at 20 degrees C has been obtained in a tensile-strained index-guided AlGaInP LD emitting at 625 nm, which has an active region consisting of five 8 nm thick QWs with a lattice mismatch of -0.9%. It is shown that optimisation of the tensile-strained QW structure is very useful in improving the performance of AlGaInP LDs at wavelengths shorter than 630 nm.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; optical waveguides; semiconductor lasers; 20 degC; 47 mA; 625 nm; GaInP-AlGaInP; MQW LDs; index-guided; low threshold current; semiconductors; tensile-strained QW structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930483
  • Filename
    209976
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881739