DocumentCode
881746
Title
Microwave power InP/InGaAs/InP double-heterojunction bipolar transistors
Author
Song, Jong-In ; Hong, Woo-Pyo ; Bhat, Ritesh ; Hayes, J.R. ; Wei, C.J. ; Hwang, James C. M.
Author_Institution
Bellcore, Red Bank, NJ, USA
Volume
29
Issue
8
fYear
1993
fDate
4/15/1993 12:00:00 AM
Firstpage
724
Lastpage
725
Abstract
The first demonstration of the microwave power performance of an InP/InGaAs/InP double-heterojunction bipolar transistor (DHBT) is reported. A collector-emitter breakdown voltage in excess of 14 V was achieved with a current gain of 70. A maximum output power density of approximately 1 W/mm emitter length was measured at 5 GHz with a power gain of 8 dB. The results show the significant potential of InP based DHBTs for microwave power applications.
Keywords
III-V semiconductors; electric breakdown of solids; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 14 V; 5 GHz; 8 dB; DHBT; InP-InGaAs-InP; SHF; collector-emitter breakdown voltage; double-heterojunction bipolar transistors; microwave power performance; power gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930484
Filename
209977
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