Active bipolar transistor solid-state crosspoints

Author

Danneels, Johan M R ; Sansen, Willy M C

Volume

11

Issue

3

fYear

1976

fDate

6/1/1976 12:00:00 AM

Firstpage

394

Lastpage

400

Abstract

The new principle of an active crosspoint for telecommunications traffic exchanges is explained. Its basic difference concerns the application of device gain to obtain more favorable on-state specifications. The realization of this principle has resulted in a stable circuit which is insensitive to transients and temperature variations. This circuit also provides good off-state specifications and broad-band frequency performance. Finally, the concept is such that large-scale integration (LSI) by means of conventional bipolar technology allows the fabrication of large and low-cost crosspoint arrays.

Keywords

Active networks; Bipolar transistors; Electronic switching systems; Large scale integration; Monolithic integrated circuits; Semiconductor switches; Telephone switching equipment; active networks; bipolar transistors; electronic switching systems; large scale integration; monolithic integrated circuits; semiconductor switches; telephone switching equipment; Bipolar transistors; Circuit simulation; Conductors; Fabrication; Large scale integration; MESFETs; Production; Solid state circuits; Speech; Telecommunication traffic;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1976.1050742

Filename

1050742