MONOS memory in sequential laterally solidified low-temperature poly-Si TFTs

Author

Hsieh, Szu-I ; Chen, Hung-Tse ; Chen, Yu-Cheng ; Chen, Chi-Lin ; King, Ya-Chin

Author_Institution

Semicond. Technol. Applications Res. Group, Nat. Tsing-Hua Univ., Hsinchu, Taiwan

Volume

27

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

272

Lastpage

274

Abstract

A metal-oxide-nitride-oxide-polysilicon (MONOS) memory device fabricated by sequential lateral solidified (SLS) low-temperature polycrystalline silicon (poly-Si) technology on a glass substrate was investigated. The Si protrusions at grain boundaries (GBs) as a result of the SLS process can be well controlled and located along the width direction of the transistor. Protrusions at the GBs are utilized as emitting source to achieve a MONOS memory device with low operation voltage (≤ 20 V), fast program/erase time, and wide V_th window by field-enhanced channel hot electron injection for programming and field-enhanced band-to-band tunneling-induced hot hole injection for erase. This is the first study to demonstrate a nonvolatile memory device in low-temperature poly-Si thin-film transistor (LTPS TFT) technology, which can be integrated with TFT-liquid crystal display, to reduce power consumption for mobile applications.

Keywords

cryogenic electronics; elemental semiconductors; field effect transistor circuits; glass; grain boundaries; hot carriers; random-access storage; semiconductor storage; silicon; solidification; thin film circuits; thin film transistors; MONOS memory device; Si; TFT liquid crystal display; band-to-band tunneling-induced hot hole injection; channel hot electron injection; glass substrate; grain boundaries; low temperature polysilicon TFT device; metal-oxide-nitride-oxide-polysilicon memory device; nonvolatile memory device; polycrystalline silicon technology; sequential lateral solidification; Channel hot electron injection; Glass; Grain boundaries; Hot carriers; Laser sintering; Low voltage; MONOS devices; Silicon; Substrates; Thin film transistors; Band-to-band tunneling-induced hot hole injection (BBHH); channel hot electron (CHE); grain boundary (GB); liquid crystal display (LCD); low-temperature poly-Si (LTPS); metal–oxide–nitride–oxide–polysilicon (MONOS); sequential lateral solidification (SLS); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.871538

Filename

1610783