Experimental study of flicker noise in m.i.s. field-effect transistors

The experimental dependence of flicker noise on the geometry parameters of m.i.s. field-effect transistors is presented. It is found that the gate-referred r.m.s. noise voltage en in the flicker region is inversely proportional to the square root of the gate width of the device. It is also observed that en is directly proportional to the effective gate-insulator thickness. These experimental results are in good agreement with the published results of flicker-noise analyses. Thus, for a given surface State density, it is possible to reduce the magnitude of flicker noise by a control of device geometry parameters.