DocumentCode
882538
Title
MNOS-BORAM memory characteristics
Author
Lodi, Robert J. ; Wegener, H.A.Richard ; Borovicka, Millicent B. ; Kosicki, Bernard B. ; Pogemiller, Thomas A. ; Eklund, Marshall W.
Volume
11
Issue
5
fYear
1976
fDate
10/1/1976 12:00:00 AM
Firstpage
622
Lastpage
630
Abstract
This paper describes the characteristics of a block-oriented random-access memory (BORAM) system which uses a custom-designed 2-kbit MNOS memory array for information storage. Delivery of two fully functional memory systems has been a significant achievement in the development of the MNOS memory technology. The organizational concepts and performance characteristics of both the memory system and the MNOS memory array are discussed, including speed, data transfer rate, and retention.
Keywords
Digital integrated circuits; Monolithic integrated circuits; Random-access storage; Semiconductor storage devices; digital integrated circuits; monolithic integrated circuits; random-access storage; semiconductor storage devices; Data security; Helium; Information security; Nonvolatile memory; Power dissipation; Power system security; Propagation delay; Random access memory; Read-write memory; Semiconductor memory;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1976.1050790
Filename
1050790
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