• DocumentCode
    883338
  • Title

    Polycrystalline silicon as a diffusion source and interconnect layer in I/sup 2/L realizations

  • Author

    Middelhoek, Jan ; Kooy, Arie

  • Volume
    12
  • Issue
    2
  • fYear
    1977
  • fDate
    4/1/1977 12:00:00 AM
  • Firstpage
    135
  • Lastpage
    138
  • Abstract
    Boron-doped polycrystalline silicon is applied as a diffusion source for the p-type regions of I/SUP 2/L devices. The polysilicon also serves as a conductive level which requires no contact windows in the p-type regions. Compared to conventional processing a higher fan-out, size reduction, and a greater layout flexibility are reported.
  • Keywords
    Bipolar integrated circuits; Integrated circuit technology; Integrated logic circuits; Semiconductor doping; bipolar integrated circuits; integrated circuit technology; integrated logic circuits; semiconductor doping; Bipolar transistors; Boron; Capacitance; Etching; Fabrication; Integrated circuit layout; Region 1; Silicon; Solid state circuits; Surface resistance;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1977.1050861
  • Filename
    1050861
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=883338