DocumentCode
883385
Title
Modeling the dynamic behavior of I/sup 2/L
Author
Mattheus, Walter H. ; De Smet, Luk ; Mertens, Robert P.
Volume
12
Issue
2
fYear
1977
fDate
4/1/1977 12:00:00 AM
Firstpage
163
Lastpage
170
Abstract
The validity of the charge control approach is checked for the normal (upward) operation of an I/SUP 2/L gate, leading to the conclusion that deviations are mainly due to the distributed nature of the base resistance. An alternative method is presented to determine the relevant device parameters, starting from experimental data. An equivalent model, incorporating the distributed base resistance, is proposed and verified by simulating the power delay characteristics of ring oscillators.
Keywords
Bipolar integrated circuits; Integrated logic circuits; Semiconductor device models; bipolar integrated circuits; integrated logic circuits; semiconductor device models; Charge measurement; Control theory; Current measurement; Delay; Electrical resistance measurement; Frequency measurement; Impedance measurement; Laboratories; Ring oscillators; Transient analysis;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1977.1050866
Filename
1050866
Link To Document