• DocumentCode
    883463
  • Title

    I/sup 2/L current gain design

  • Author

    Hewlett, Frank W., Jr.

  • Volume
    12
  • Issue
    2
  • fYear
    1977
  • fDate
    4/1/1977 12:00:00 AM
  • Firstpage
    206
  • Lastpage
    281
  • Abstract
    A DC model useful for I/SUP 2/L upward current gain (/spl beta//SUB /spl mu//) design is described. An expression for /spl beta//SUB /spl mu// is obtained in terms of model parameters which are related to device morphology. Design parameters are identified for a standard bipolar technology and a minimum geometry cell.
  • Keywords
    Bipolar integrated circuits; Integrated logic circuits; Semiconductor device models; bipolar integrated circuits; integrated logic circuits; semiconductor device models; Bipolar transistors; Current density; Doping; Electrical resistance measurement; Electrons; Logic circuits; Photonic band gap; Predictive models; Solid modeling; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1977.1050873
  • Filename
    1050873
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=883463