Modifying the current/voltage characteristics of ion beam synthesised CoSi2/Si Schottky barrier diodes by phosphorus and arsenic implantation

Changes in the current/voltage characteristics of ion beam synthesised CoSi₂/Si (n-type) Schottky barrier diodes implanted with arsenic and phosphorus have been examined as a function of anneal temperature. Implanting a dopant dose of 10¹⁴ ion/cm^-2 and annealing in the temperature range 400-1000 degrees C allows the effective barrier height to be controlled with ohmic characteristics being observed after annealing at 1000 degrees C. For a higher dose (2*10¹⁵ ion/cm^-2) ohmic characteristics are seen after annealing at lower temperatures. These changes are attributed to an increase in tunnelling current resulting from a high electric field at the silicide/silicon interface.