DocumentCode
884040
Title
Polarisation dependent interband optical absorption in strained nonsquare InGaAs/GaAs quantum well
Author
Micallef, J. ; Li, E.H. ; Weiss, B.L.
Author_Institution
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
Volume
28
Issue
6
fYear
1992
fDate
3/12/1992 12:00:00 AM
Firstpage
526
Lastpage
528
Abstract
Results of the effects of an error-function compositional profile, which simulates the effects of disordering, in a strained quantum well structure on the polarisation dependent interband absorption coefficient are presented. Strain and disordering can be combined in quantum well structures to tailor the absorption edge to desired wavelengths.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared spectra of inorganic solids; light absorption; light polarisation; semiconductor quantum wells; 0.85 to 1 micron; InGaAs-GaAs strained quantum well; absorption edge; disordering; error-function compositional profile; interband optical absorption; polarisation dependence; strain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920332
Filename
126478
Link To Document